公开(公告)号：US20210389369A1

公开(公告)日：2021-12-16

申请号：US17412760

申请日：2021-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Goo LEE ,  Dae Han KIM ,  Ji Yun KIM ,  Jin Yub LEE

IPC: G01R31/28 ,  H01L21/66 ,  G01R31/26

Abstract: Provided are a semiconductor device and a method of operating the same. A semiconductor includes a test circuit which comprises: a test transistor to be tested for time-dependent dielectric breakdown (TDDB) characteristics using a stress voltage; an input switch disposed between a voltage application node to which the stress voltage is applied and an input node which transmits the stress voltage to the test transistor; and a protection switch disposed between the input node and a ground node.