-
公开(公告)号:US20210134804A1
公开(公告)日:2021-05-06
申请号:US16897589
申请日:2020-06-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyooho JUNG , Younsoo KIM , Young-lim PARK , Jeong-Gyu SONG , Se Hyoung AHN , Changmu AN
IPC: H01L27/108 , H01L49/02 , H01L21/02
Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.
-
公开(公告)号:US20210391333A1
公开(公告)日:2021-12-16
申请号:US17412801
申请日:2021-08-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyooho JUNG , Younsoo KIM , Young-Lim PARK , Jeong-Gyu SONG , Se Hyoung AHN , Changmu AN
IPC: H01L27/108 , H01L21/02 , H01L49/02
Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.
-