公开(公告)号：US20210391333A1

公开(公告)日：2021-12-16

申请号：US17412801

申请日：2021-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho JUNG ,  Younsoo KIM ,  Young-Lim PARK ,  Jeong-Gyu SONG ,  Se Hyoung AHN ,  Changmu AN

IPC: H01L27/108 ,  H01L21/02 ,  H01L49/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.

公开(公告)号：US20210134804A1

公开(公告)日：2021-05-06

申请号：US16897589

申请日：2020-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho JUNG ,  Younsoo KIM ,  Young-lim PARK ,  Jeong-Gyu SONG ,  Se Hyoung AHN ,  Changmu AN

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.

公开(公告)号：US20210296429A1

公开(公告)日：2021-09-23

申请号：US17342610

申请日：2021-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Lim PARK ,  Se Hyoung AHN ,  Sang Yeol KANG ,  Chang Mu AN ,  Kyoo Ho JUNG

IPC: H01L49/02 ,  H01L27/11507 ,  H01L27/108

Abstract: A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, the lower electrode including an outer portion, the outer portion including first and second regions, and an inner portion inside the outer portion, a dielectric film on the lower electrode to extend along the first region of the outer portion, and an upper electrode on the dielectric film, wherein the outer portion of the lower electrode includes a metal dopant, a concentration of the metal dopant in the first region of the outer portion being different from a concentration of the metal dopant in the second region of the outer portion.