公开(公告)号：US20190245076A1

公开(公告)日：2019-08-08

申请号：US16129935

申请日：2018-09-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geum-jung SEONG ,  Bo-ra LIM ,  Jeong-yun LEE ,  Ah-reum JI

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L21/768 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/088

Abstract: A semiconductor device includes a substrate having a fin active region pattern having a protruding shape, a device isolation layer pattern covering a side surface of a lower portion of the fin active region pattern, a spacer pattern covering a side surface of a portion of the fin active region pattern that protrudes from a top surface of the device isolation layer pattern, and a source/drain region in contact with a top surface of the fin active region pattern and a top surface of the spacer pattern.

公开(公告)号：US20190198497A1

公开(公告)日：2019-06-27

申请号：US16288727

申请日：2019-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-han LEE ,  Sun-ghil LEE ,  Myung-il KANG ,  Jeong-yun LEE ,  Seung-hun LEE ,  Hyun-jung LEE ,  Sun-wook KIM

IPC: H01L27/088 ,  H01L27/11 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/02

Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.