公开(公告)号：US20200336680A1

公开(公告)日：2020-10-22

申请号：US16670216

申请日：2019-10-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungjoon LEE ,  Jungbin YUN ,  Younghwan PARK ,  Jeongjin CHO

IPC: H04N5/343 ,  H01L27/146

Abstract: A light sensing circuit and an image sensor are provided. The image sensor includes a first pixel unit including a plurality of first photodiodes and a first driving circuit to generate a first pixel signal based on an amount of charges stored in the plurality of first photodiodes, a second pixel unit including a plurality of second photodiodes and a second driving circuit to generate a second pixel signal based on an amount of charges stored in the plurality of second photodiodes, and a switching circuit connected to the first driving circuit through a first diffusion node and connected to the second driving circuit through a second diffusion node. The switching circuit connects or disconnects the first diffusion node and the second diffusion node based on a mode selection signal.

公开(公告)号：US20230066376A1

公开(公告)日：2023-03-02

申请号：US18049851

申请日：2022-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youjin JEONG ,  Minji JUNG ,  Jeongjin CHO

IPC: H01L27/146

Abstract: An image sensor includes a substrate the substrate including a plurality of unit pixels arranged in a direction parallel to a first direction; a first and second photodiode inside of the substrate in each of the plurality of unit pixels and separated from each other in a second direction, perpendicular to the first direction; and a device isolation film between the plurality of unit pixels. A pair of pixels side-by-side in a third direction, perpendicular to the first and second direction, among the plurality of unit pixels, share a microlens, and at least one of the plurality of unit pixels includes a light shielding film on the substrate. Accordingly, in the image sensor, while maintaining the existing photodiode forming process, the autofocusing function in a vertical direction may be supplemented, and further, performance of the image sensor may be improved.

公开(公告)号：US20250040270A1

公开(公告)日：2025-01-30

申请号：US18746917

申请日：2024-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daeuk JUNG ,  Youngrae KIM ,  Jeongjin CHO ,  Sachoun PARK ,  Junghyung PYO

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a plurality of photodiodes in the substrate, a pixel separating pattern in the substrate separating the plurality of photodiodes, a first active pattern in the substrate at least partially overlapping a first photodiode and a second photodiode from among the plurality of photodiodes, a selection gate on the first active pattern at least partially overlapping the first photodiode, and a source follower gate on the first active pattern at least partially overlapping the second photodiode. The first photodiode is adjacent to the second photodiode. The pixel separating pattern includes a first pixel separating pattern and a second pixel separating pattern disposed between the first photodiode and the second photodiode. The first pixel separating pattern is spaced from the second pixel separating pattern. The first active pattern includes a first extrinsic region disposed between the first pixel separating pattern and the second pixel separating pattern.

公开(公告)号：US20250081638A1

公开(公告)日：2025-03-06

申请号：US18954456

申请日：2024-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongjin CHO ,  Kwanhee LEE

IPC: H01L27/146 ,  H04N25/75 ,  H04N25/772

Abstract: A pixel array and an image sensor including the pixel array are provided. The pixel array included in the image sensor includes a plurality of pixels arranged in a matrix, and a plurality of column lines each commonly connected to pixels arranged on a same column from among the plurality of pixels. Each of the plurality of pixels includes four subpixels. Each of the four subpixels includes four photoelectric conversion devices; a floating diffusion region storing electric charges generated by the four photoelectric conversion devices; and four transmission gates configured to transmit the electric charges generated by the four photoelectric conversion devices to the floating diffusion region. Four floating diffusion regions included in the four subpixels are electrically connected to one another via internal wiring. Each of the plurality of pixels further includes a reset gate, a first driving gate and a first selection gate.

公开(公告)号：US20230011827A1

公开(公告)日：2023-01-12

申请号：US17715358

申请日：2022-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongjin CHO ,  Kyungho Lee ,  Taesub Jung

IPC: H01L27/146

Abstract: A method of operating an image sensor includes accumulating first charges through a photo diode, applying a first transfer gate signal having a first voltage level to a transfer transistor, performing, through a reset transistor, a first reset operation on a floating diffusion node connected with the reset transistor and the transfer transistor, changing the first voltage level of the first transfer gate signal to a second voltage level higher than the first voltage level, during the first reset operation, changing the second voltage level of the first transfer gate signal to a third voltage level higher than the second voltage level, and changing the third voltage level of the first transfer gate signal to the second voltage level.

公开(公告)号：US20220399384A1

公开(公告)日：2022-12-15

申请号：US17831478

申请日：2022-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongjin CHO ,  Kwanhee LEE

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/3745

Abstract: A pixel array and an image sensor including the pixel array are provided. The pixel array included in the image sensor includes a plurality of pixels arranged in a matrix, and a plurality of column lines each commonly connected to pixels arranged on a same column from among the plurality of pixels. Each of the plurality of pixels includes four subpixels. Each of the four subpixels includes four photoelectric conversion devices; a floating diffusion region storing electric charges generated by the four photoelectric conversion devices; and four transmission gates configured to transmit the electric charges generated by the four photoelectric conversion devices to the floating diffusion region. Four floating diffusion regions included in the four subpixels are electrically connected to one another via internal wiring. Each of the plurality of pixels further includes a reset gate, a first driving gate and a first selection gate.

公开(公告)号：US20220190023A1

公开(公告)日：2022-06-16

申请号：US17471537

申请日：2021-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youjin JEONG ,  Minji JUNG ,  Jeongjin CHO

IPC: H01L27/146

Abstract: An image sensor includes a substrate the substrate including a plurality of unit pixels arranged in a direction parallel to a first direction; a first and second photodiode inside of the substrate in each of the plurality of unit pixels and separated from each other in a second direction, perpendicular to the first direction; and a device isolation film between the plurality of unit pixels. A pair of pixels side-by-side in a third direction, perpendicular to the first and second direction, among the plurality of unit pixels, share a microlens, and at least one of the plurality of unit pixels includes a light shielding film on the substrate. Accordingly, in the image sensor, while maintaining the existing photodiode forming process, the autofocusing function in a vertical direction may be supplemented, and further, performance of the image sensor may be improved.