公开(公告)号：US20240128264A1

公开(公告)日：2024-04-18

申请号：US18331296

申请日：2023-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Min Yu ,  Heon Jong Shin ,  Doo Hyun Lee

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

CPC classification number: H01L27/088 ,  H01L21/823412 ,  H01L21/823481 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775

Abstract: A semiconductor device includes a substrate, first and second active patterns extending in a first horizontal direction on the substrate, first and second gate electrodes extending in a second horizontal direction on the first and second active patterns, respectively, a first trench extending in the second horizontal direction between the first and second gate electrodes and separating the first and second active patterns, at least part of the first trench is in the substrate, an active cut extending along sidewalls and a bottom surface of the first trench and contacting each of the first and second active patterns, a second trench on the active cut in the first trench, and a flowable material layer in at least part of the second trench, the flowable material layer including a flowable insulating material and not being in contact with each of the substrate and the first and second active patterns.