公开(公告)号：US20160062819A1

公开(公告)日：2016-03-03

申请号：US14740457

申请日：2015-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Hyuk OH ,  Ki-Seok PARK

IPC: G06F11/07 ,  G06F11/10

CPC classification number: G11C29/70 ,  G06F11/1048 ,  G11C29/4401 ,  G11C2029/0409

Abstract: Provided is a method for repairing one or more defective memory cells of a semiconductor memory device by a system management interrupt and a basic input/output system service routine. In the method, when an error has occurred in data read from the semiconductor memory device, the system management interrupt is generated to invoke the basic input/output system service routine. During execution of the basic input/output system service routine, a repair task is performed to one or more defective memory cells causing a read error in the semiconductor memory device using spare memory cells.

Abstract translation: 提供了一种通过系统管理中断和基本输入/输出系统服务程序修复半导体存储器件的一个或多个缺陷存储单元的方法。 在该方法中，当从半导体存储器件读出的数据发生错误时，生成系统管理中断以调用基本输入/输出系统服务程序。 在执行基本输入/输出系统服务程序期间，对使用备用存储器单元的半导体存储器件中的读出错误的一个或多个有缺陷的存储单元执行修复任务。