公开(公告)号：US20240404570A1

公开(公告)日：2024-12-05

申请号：US18581187

申请日：2024-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Seok PARK ,  Do-Han KIM ,  Minsu BAE ,  Chang-Hyun BAE ,  Young-Hoon SON ,  Hye-Seung YU ,  Yoenhwa LEE ,  Daihyun LIM ,  Insu CHOI ,  Kideok HAN

IPC: G11C7/22 ,  G11C7/10

Abstract: A method of training a memory device is provided. In first to third DCA training steps, a score for each of first to third DCA code combinations is calculated based on an eye window size of a data signal, and in response to a tie occurring among scores, a DCA code combination is selected based on the sum of an even-eye window minimum value and an odd-eye window minimum value of the data signal.

公开(公告)号：US20240321338A1

公开(公告)日：2024-09-26

申请号：US18529283

申请日：2023-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kideok HAN ,  Ki-Seok PARK ,  Young-Hoon SON ,  Do-Han KIM ,  Min-Su BAE ,  Yoenhwa LEE ,  Insu CHOI

IPC: G11C11/4076 ,  G11C11/4096

CPC classification number: G11C11/4076 ,  G11C11/4096

Abstract: A training method of a memory device adjusting an eye window of a data signal in response to a duty cycle adjuster (DCA) includes performing a first training operation that selects a first DCA code corresponding to a first internal clock signal having a phase difference of 180° relative to a reference internal clock signal, and performing a second training operation that selects a second DCA code and a third DCA code respectively corresponding to a second internal clock signal and a third internal clock signal having a phase difference of 90° and 270° relative to reference internal clock signal. In the first training operation, the eye window size of the data signal is measured in units of two unit intervals, and in the second training operation, the eye window size of the data signal is measured in units of one unit interval.

公开(公告)号：US20160062819A1

公开(公告)日：2016-03-03

申请号：US14740457

申请日：2015-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-Hyuk OH ,  Ki-Seok PARK

IPC: G06F11/07 ,  G06F11/10

CPC classification number: G11C29/70 ,  G06F11/1048 ,  G11C29/4401 ,  G11C2029/0409

Abstract: Provided is a method for repairing one or more defective memory cells of a semiconductor memory device by a system management interrupt and a basic input/output system service routine. In the method, when an error has occurred in data read from the semiconductor memory device, the system management interrupt is generated to invoke the basic input/output system service routine. During execution of the basic input/output system service routine, a repair task is performed to one or more defective memory cells causing a read error in the semiconductor memory device using spare memory cells.

Abstract translation: 提供了一种通过系统管理中断和基本输入/输出系统服务程序修复半导体存储器件的一个或多个缺陷存储单元的方法。 在该方法中，当从半导体存储器件读出的数据发生错误时，生成系统管理中断以调用基本输入/输出系统服务程序。 在执行基本输入/输出系统服务程序期间，对使用备用存储器单元的半导体存储器件中的读出错误的一个或多个有缺陷的存储单元执行修复任务。