公开(公告)号：US10256342B2

公开(公告)日：2019-04-09

申请号：US15728965

申请日：2017-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-hee Park ,  Young-seok Song ,  Ji-soo Chang ,  Young-chul Hwang

IPC: H01L21/8234 ,  H01L29/78 ,  H01L27/088 ,  H01L29/66 ,  H01L27/092

Abstract: An IC device includes a substrate including a device region having a fin-type active region and a deep trench region; a gate line that extends in a direction intersecting the fin-type active region; and an inter-device isolation layer that fills the deep trench region. The gate line includes a first gate portion that extends on the device region to cover the fin-type active region and has a flat upper surface at a first level and a second gate portion that extends on the deep trench region to cover the inter-device isolation layer while being integrally connected to the first gate portion and has an upper surface at a second level that is closer to the substrate than the first level.

公开(公告)号：US10567018B2

公开(公告)日：2020-02-18

申请号：US16196149

申请日：2018-11-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong-won Joo ,  Ji-soo Chang

IPC: H03D1/04 ,  H04B1/10 ,  H03F3/45 ,  H03F1/26

Abstract: Provided is a current-to-voltage converter for converting a current signal into a voltage signal. The current-to-voltage converter may include: a trans-impedance amplifier including an input terminal and an output terminal; a resistor-capacitor (RC) circuit including a first end and a second end respectively connected to the input terminal and the output terminal of the trans-impedance amplifier, and a resistor and a capacitor connected to each other in parallel between the first end and the second end; and a plurality of switches configured to form at least one of a first converting circuit configured to convert the current signal via the trans-impedance amplifier and the RC circuit in a wide bandwidth mode, and a second converting circuit configured to convert the current signal via the RC circuit in a narrow bandwidth mode.

公开(公告)号：US09818879B2

公开(公告)日：2017-11-14

申请号：US14807912

申请日：2015-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-hee Park ,  Young-seok Song ,  Ji-soo Chang ,  Young-chul Hwang

IPC: H01L29/78 ,  H01L27/088 ,  H01L27/092 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L29/7856 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/66545

Abstract: An IC device includes a substrate including a device region having a fin-type active region and a deep trench region; a gate line that extends in a direction intersecting the fin-type active region; and an inter-device isolation layer that fills the deep trench region. The gate line includes a first gate portion that extends on the device region to cover the fin-type active region and has a flat upper surface at a first level and a second gate portion that extends on the deep trench region to cover the inter-device isolation layer while being integrally connected to the first gate portion and has an upper surface at a second level that is closer to the substrate than the first level.

公开(公告)号：US10797662B2

公开(公告)日：2020-10-06

申请号：US16277093

申请日：2019-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong-won Joo ,  Ji-soo Chang

IPC: H03F1/14 ,  H03F3/45 ,  H03F3/193 ,  H03F3/21

Abstract: An amplifying circuit may include: an amplifier configured to receive a first input voltage and output a first output voltage by amplifying the first input voltage; and a common-mode feedback circuit configured to enable the first output voltage to operate in a common mode by receiving the first output voltage and performing a feedback to adjust at least one feedback voltage applied to the amplifier based on the first output voltage. The common-mode feedback circuit may include a first Miller compensation circuit configured to perform dominant pole compensation by using a Miller effect for the common-mode feedback circuit. The first Miller compensation circuit may include a resistor and a capacitor.