公开(公告)号：US11133277B2

公开(公告)日：2021-09-28

申请号：US16527323

申请日：2019-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Nam Kim ,  Tae Seong Kim ,  Hoon Joo Na ,  Kwang Jin Moon

IPC: H01L23/00 ,  H01L23/48 ,  H01L25/18 ,  H01L23/528 ,  H01L23/522

Abstract: A semiconductor device includes a first semiconductor chip having a first bonding layer and a second semiconductor chip stacked on the first semiconductor chip and having a second bonding layer. The first bonding layer includes a first bonding pad, a plurality of first internal vias, and a first interconnection connecting the first bonding pad and the plurality of first internal vias. The second bonding layer includes a second bonding pad bonded to the first bonding pad. An upper surface of the first interconnection and an upper surface of the first bonding pad are coplanar with an upper surface of the first bonding layer. The first interconnection is electrically connected to the plurality of different first internal lines through the plurality of first internal vias.

公开(公告)号：US20200243466A1

公开(公告)日：2020-07-30

申请号：US16527323

申请日：2019-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Nam Kim ,  Tae Seong Kim ,  Hoon Joo Na ,  Kwang Jin Moon

IPC: H01L23/00 ,  H01L23/48 ,  H01L25/18 ,  H01L23/522 ,  H01L23/528

Abstract: A semiconductor device includes a first semiconductor chip having a first bonding layer and a second semiconductor chip stacked on the first semiconductor chip and having a second bonding layer. The first bonding layer includes a first bonding pad, a plurality of first internal vias, and a first interconnection connecting the first bonding pad and the plurality of first internal vias. The second bonding layer includes a second bonding pad bonded to the first bonding pad. An upper surface of the first interconnection and an upper surface of the first bonding pad are coplanar with an upper surface of the first bonding layer. The first interconnection is electrically connected to the plurality of different first internal lines through the plurality of first internal vias.