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    Memory device
    1.
    发明授权
    Memory device 有权

    公开(公告)号：US10546894B2

    公开(公告)日：2020-01-28

    申请号：US16226855

    申请日：2018-12-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Zhe Wu ,  Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Jeong-hee Park ,  Jin-woo Lee ,  Dong-jun Seong ,  Seol Choi

    IPC: H01L27/24 ,  H01L45/00

    Abstract: A memory device includes a plurality of word lines extending along a first direction and spaced apart from each other along a second direction that is perpendicular to the first direction; a plurality of bit lines extending along the second direction and spaced apart from each other in the first direction, the plurality of bit lines being spaced apart from the plurality of word lines in a third direction that is perpendicular to both the first and second directions; and a plurality of memory cells being respectively arranged between the corresponding word and bit lines. Each of the memory cells includes a selection device layer, and a variable resistance layer, wherein the selection device layer includes a chalcogenide switching material having a composition according to a particular chemical formula.

    Display driving circuit and display driving method
    2.
    发明授权
    Display driving circuit and display driving method 有权

    公开(公告)号：US10147381B2

    公开(公告)日：2018-12-04

    申请号：US14800865

    申请日：2015-07-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin-woo Lee ,  Hyun-sang Park ,  Hye-Jin Jung ,  Kyung-chun Kim

    IPC: G09G3/36

    Abstract: A display driving circuit includes a first bias circuit, a second bias circuit, a selector, and an output buffer. The first bias circuit generates a first bias voltage set. The second bias circuit generates a second bias voltage set. The selector selects one of the first and second bias voltage sets based on a bias selection signal. The output buffer buffers a grayscale voltage corresponding to display data and outputs the buffered grayscale voltage The output buffer is biased based on the first or second bias voltage set selected by the selector.

    Memory devices
    4.
    发明授权
    Memory devices 有权

    公开(公告)号：US11205682B2

    公开(公告)日：2021-12-21

    申请号：US16446812

    申请日：2019-06-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Zhe Wu ,  Ja-bin Lee ,  Jin-woo Lee ,  Kyu-bong Jung

    IPC: H01L45/00 ,  H01L27/24

    Abstract: A memory device includes first conductive lines extending in a first direction, second conductive lines extending in a second direction, and a plurality of memory cells each arranged between the first and second conductive lines and each including a variable resistance memory layer and a switch material pattern. The switch material pattern includes an element injection area arranged in an outer area of the switch material pattern, and an internal area covered by the element injection area. The internal area contains a first content of at least one element from arsenic (As), sulfur (S), selenium (Se), and tellurium (Te), the element injection area contains a second content of the at least one element from As, S, Se, and Te, and the second content has a profile in which a content of the at least one element decreases away from the at least one surface of the switch material pattern.

    MEMORY DEVICE
    5.
    发明申请
    MEMORY DEVICE 审中-公开

    公开(公告)号：US20190148456A1

    公开(公告)日：2019-05-16

    申请号：US16226855

    申请日：2018-12-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Zhe Wu ,  Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Jeong-hee Park ,  Jin-woo Lee ,  Dong-jun Seong ,  Seol Choi

    IPC: H01L27/24 ,  H01L45/00

    CPC classification number: H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1675

    Abstract: A memory device includes a plurality of word lines extending along a first direction and spaced apart from each other along a second direction that is perpendicular to the first direction; a plurality of bit lines extending along the second direction and spaced apart from each other in the first direction, the plurality of bit lines being spaced apart from the plurality of word lines in a third direction that is perpendicular to both the first and second directions; and a plurality of memory cells being respectively arranged between the corresponding word and bit lines. Each of the memory cells includes a selection device layer, and a variable resistance layer, wherein the selection device layer includes a chalcogenide switching material having a composition according to a particular chemical formula.

    Mobile x-ray imaging apparatus
    6.
    发明授权
    Mobile x-ray imaging apparatus 有权

    公开(公告)号：US11311256B2

    公开(公告)日：2022-04-26

    申请号：US16445750

    申请日：2019-06-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin-woo Lee ,  Dae-woong Han

    IPC: A61B6/00 ,  A61B6/10

    Abstract: A mobile X-ray imaging apparatus includes a first column rotatably coupled to a main body and extending in one direction; a second column extending in the one direction and slidably coupled to the first column in an extension direction of the first column; a display provided in the main body; and a indicator arranged in one end of the second column.

    Mobile x-ray imaging apparatus
    7.
    发明授权
    Mobile x-ray imaging apparatus 有权

    公开(公告)号：US11103203B2

    公开(公告)日：2021-08-31

    申请号：US16445750

    申请日：2019-06-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin-woo Lee ,  Dae-woong Han

    IPC: A61B6/00 ,  A61B6/10

    Abstract: A mobile X-ray imaging apparatus includes a first column rotatably coupled to a main body and extending in one direction; a second column extending in the one direction and slidably coupled to the first column in an extension direction of the first column; a display provided in the main body; and a indicator arranged in one end of the second column.

    MEMORY DEVICES
    8.
    发明申请
    MEMORY DEVICES 审中-公开

    公开(公告)号：US20200075675A1

    公开(公告)日：2020-03-05

    申请号：US16446812

    申请日：2019-06-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Zhe Wu ,  Ja-bin Lee ,  Jin-woo Lee ,  Kyu-bong Jung

    IPC: H01L27/24 ,  H01L45/00

    Abstract: A memory device includes first conductive lines extending in a first direction, second conductive lines extending in a second direction, and a plurality of memory cells each arranged between the first and second conductive lines and each including a variable resistance memory layer and a switch material pattern. The switch material pattern includes an element injection area arranged in an outer area of the switch material pattern, and an internal area covered by the element injection area. The internal area contains a first content of at least one element from arsenic (As), sulfur (S), selenium (Se), and tellurium (Te), the element injection area contains a second content of the at least one element from As, S, Se, and Te, and the second content has a profile in which a content of the at least one element decreases away from the at least one surface of the switch material pattern.

    Mobile X-ray imaging apparatus
    9.
    发明授权
    Mobile X-ray imaging apparatus 有权

    公开(公告)号：US10335102B2

    公开(公告)日：2019-07-02

    申请号：US15627655

    申请日：2017-06-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin-woo Lee ,  Dae-woong Han

    IPC: A61B6/00 ,  A61B6/10

    Abstract: A mobile X-ray imaging apparatus includes a first column rotatably coupled to a main body and extending in one direction; a second column extending in the one direction and slidably coupled to the first column in an extension direction of the first column; a display provided in the main body; and a indicator arranged in one end of the second column.

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