公开(公告)号：US20250053304A1

公开(公告)日：2025-02-13

申请号：US18588434

申请日：2024-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohyun Kim ,  Eui-young Chung ,  Seong Jun Yun ,  Jinwoo Choi ,  Yeri Heo

IPC: G06F3/06

Abstract: A memory system and an electronic system including the same are provided. The memory system includes a memory device configured to receive data, and a hot page logic configured to receive an address for the data, determine that the address is for a hot page based on an input frequency and an input order of the address, and create hot page information including the address that was determined as associated with the hot page such that a page migration operation of the data is performed.

公开(公告)号：US20240125841A1

公开(公告)日：2024-04-18

申请号：US18454404

申请日：2023-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cheongwon Lee ,  Gyosoo Choo ,  Youngwoo Park ,  Seunghoon Lee ,  Jinwoo Choi

IPC: G01R31/26

CPC classification number: G01R31/2607

Abstract: An embodiment provides a test element group (TEG) circuit, including: a first pad configured for a test voltage to be applied; an amplifier including a first input terminal connected to the first pad, a second input terminal connected to a first terminal of a test transistor, and an output terminal electrically connected to the second input terminal; a variable resistor including one terminal connected to the output terminal of the amplifier and the other terminal connected to the first terminal of the test transistor; and a gate driving circuit that supplies a gate voltage to a gate of the test transistor.