公开(公告)号：US20200135878A1

公开(公告)日：2020-04-30

申请号：US16356378

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngtek OH ,  Jinwook JUNG ,  Hyeokshin KWON ,  Wontaek SEO ,  lnsu JEON

IPC: H01L29/45 ,  H01L29/16 ,  H01L29/786

Abstract: A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.

公开(公告)号：US20210005731A1

公开(公告)日：2021-01-07

申请号：US17028205

申请日：2020-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngtek OH ,  Jinwook JUNG ,  Hyeokshin KWON ,  Wontaek SEO ,  Insu JEON

IPC: H01L29/45 ,  H01L29/786 ,  H01L29/16

Abstract: A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.

公开(公告)号：US20210234016A1

公开(公告)日：2021-07-29

申请号：US17227456

申请日：2021-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngtek OH ,  Jinwook JUNG ,  Seunggeol NAM ,  Wontaek SEO ,  Insu JEON

IPC: H01L29/45

Abstract: Provided are transistors including an electride electrode. The transistor includes a substrate, a source region and a drain region doped with ions of different polarity from the substrate in a surface of the substrate, a source electrode and a drain electrode including an electride material on the source region and the drain region, a gate insulating layer surrounding the source electrode and a drain electrode on the substrate, and a gate electrode between the source electrode and the drain electrode on the substrate. The source electrode and the drain electrode have an ohmic contact with the substrate.