公开(公告)号：US20240320173A1

公开(公告)日：2024-09-26

申请号：US18610528

申请日：2024-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngsuk Moon ,  Jaegeun Park ,  Jiwon Chang ,  Sangmuk Hwang

IPC: G06F13/28

CPC classification number: G06F13/28 ,  G06F2213/28

Abstract: A storage device includes a buffer memory, a first direct memory access (DMA) circuit configured to provide data from a host to the buffer memory or data stored in the buffer memory to the host and output a first virtual address, a second DMA circuit configured to provide data read from a non-volatile memory to the buffer memory or the data stored in the buffer memory to the non-volatile memory and output a second virtual address, an address translation circuit configured to translate the first or second virtual address into a physical address when the first or second virtual address is included in a reference range and skip the translation operation when the first or second virtual address is excluded in the reference range. A buffer controller is configured to access the buffer memory based on the physical address of the first or second virtual address that is excluded.