公开(公告)号：US20240412943A1

公开(公告)日：2024-12-12

申请号：US18528851

申请日：2023-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo Lee ,  Bumjoo Lee ,  Jong Cheon Sun ,  Suyoung Lee ,  Hyeongcheol Lee

IPC: H01J37/26 ,  H01J37/28

Abstract: A substrate inspection method includes reducing a surface potential of a substrate; and increasing a difference of the surface potential of the substrate, where reducing the surface potential of the substrate includes: controlling a scanning electron microscope to irradiate an electron beam to the substrate for a first irradiation time; and after a first standby time has elapsed, controlling the scanning electron microscope to re-irradiate the electron beam to the substrate for the first irradiation time, where increasing the difference of the surface potential of the substrate includes: controlling the scanning electron microscope to irradiate the electron beam to the substrate for a second irradiation time; and after a second standby time has elapsed, controlling the scanning electron microscope to re-irradiate the electron beam to the substrate for the second irradiation time, and where the first irradiation time is less than the second irradiation time.