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    Method of recognizing situation requiring translation and performing translation function, and electronic device implementing the same
    5.
    发明授权
    Method of recognizing situation requiring translation and performing translation function, and electronic device implementing the same 有权
    识别需要翻译和执行翻译功能的情况的方法，以及执行翻译功能的电子设备

    公开(公告)号：US09460090B2

    公开(公告)日：2016-10-04

    申请号：US14448297

    申请日：2014-07-31

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jinwoo Lee ,  Chanwoo Park ,  Byungsoo Kim ,  Jiyeon Seo ,  Myunghwan Lee

    IPC分类号： G06F17/28

    CPC分类号： G06F17/289

    摘要： Disclosed are a method of recognizing a translation situation and performing a translation function, and an electronic device implementing the same. The electronic device recognizes a situation involving translation and automatically performs a translation function, thereby improving user convenience. An electronic device includes an audio module configured to receive and output audio signal, and a processor. A language translation program is executed in response to detecting that an audio signal received through the audio module includes at least a first language and a second language, a portion of the audio signal that is in the second language is translated into the first language, and the translated portion is outputted through the audio module.

    摘要翻译： 公开了一种识别翻译情况和执行翻译功能的方法，以及实现该翻译功能的电子设备。 电子设备识别涉及翻译的情况并自动执行翻译功能，从而提高用户便利性。 电子设备包括被配置为接收和输出音频信号的音频模块以及处理器。 响应于检测到通过音频模块接收的音频信号至少包括第一语言和第二语言，执行语言翻译程序，将处于第二语言的音频信号的一部分转换为第一语言，以及 翻译部分通过音频模块输出。

    MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明公开
    MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20230371285A1

    公开(公告)日：2023-11-16

    申请号：US18302415

    申请日：2023-04-18

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jinwoo Lee ,  Dongho Ahn ,  Donggeon Gu

    IPC分类号： H10B63/00

    CPC分类号： H10B63/845 ,  H10B63/34

    摘要： A memory device includes: a gate stack on a substrate, including insulation layers and gate electrodes alternately stacked in a vertical direction, and defining a through hole in the vertical direction; and a pillar structure in the through hole, the pillar structure including: a plurality of channel portions in the through hole to face the gate electrodes and having annular horizontal cross-sections; a plurality of conductive layers in the through hole to face the insulation layers, having annular horizontal cross-sections, and having inner walls protruding toward a center of the through hole with respect to inner walls of the channel portions; and a variable resistance material layer on the inner walls of the channel portions and the inner walls of the conductive layers, in the through hole, and a first portion of the variable resistance material layer overlaps the conductive layers in the vertical direction.

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11581367B2

    公开(公告)日：2023-02-14

    申请号：US17209660

    申请日：2021-03-23

    申请人： Samsung Electronics Co., Ltd.

    发明人： Dongho Ahn ,  Segab Kwon ,  Chungman Kim ,  Kwangmin Park ,  Zhe Wu ,  Seunggeun Yu ,  Wonjun Lee ,  Jabin Lee ,  Jinwoo Lee

    IPC分类号： H01L27/24 ,  H01L45/00

    摘要： A semiconductor device includes a semiconductor substrate, a peripheral device on the semiconductor substrate, a lower insulating structure on the semiconductor substrate and covering the peripheral device, a first conductive line on the lower insulating structure, a memory cell structure on the first conductive line, and a second conductive line on the memory cell structure. The memory cell structure may include an information storage material pattern and a selector material pattern on the lower insulating structure in a vertical direction. The selector material pattern may include a first selector material layer including a first material and a second selector material layer including a second material. The second selector material layer may have a threshold voltage drift higher than that of the first material. The second selector material layer may have a second width narrower than a first width of the first selector material layer.