公开(公告)号：US20210272838A1

公开(公告)日：2021-09-02

申请号：US17324229

申请日：2021-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo SUN ,  Sung Moon PARK ,  Je Woo HAN ,  Kwang Nam KIM ,  Ho Chang LEE ,  Young Hoon JEONG ,  Masayuki TOMOYASU

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

公开(公告)号：US20250149301A1

公开(公告)日：2025-05-08

申请号：US19009570

申请日：2025-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Hoon PARK ,  Jung Hwan UM ,  Jin Young PARK ,  Ho Yong PARK ,  Jin Young BANG ,  Jong Woo SUN ,  Sang Jean JEON ,  Je Woo HAN

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.

公开(公告)号：US20210175110A1

公开(公告)日：2021-06-10

申请号：US17182613

申请日：2021-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Mo SUNG ,  Jong Woo SUN ,  Je Woo HAN ,  Chan Hoon PARK ,  Seung Yoon SONG ,  Seul Ha MYUNG

IPC: H01L21/683 ,  H01L21/67

Abstract: A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

公开(公告)号：US20200328105A1

公开(公告)日：2020-10-15

申请号：US16559762

申请日：2019-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Woo SUN ,  Sung Moon PARK ,  Je Woo HAN ,  Kwang Nam KIM ,  Ho Chang LEE ,  Young Hoon JEONG ,  Masayuki TOMOYASU

IPC: H01L21/687 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.