公开(公告)号：US20200051790A1

公开(公告)日：2020-02-13

申请号：US16252875

申请日：2019-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Chul SHIM ,  Min-Kyu KANG ,  Bum-Soo KIM ,  Yong-Soo KIM ,  Hee-Jung KIM ,  Dae-Gyu BAN ,  Kyoung-Soo LEE ,  Jong-Sang LEE ,  Hyo-Il CHOI

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  C23C16/50 ,  C23C16/44

Abstract: A plasma processing apparatus includes a plasma chamber, an electrostatic chuck disposed in the plasma chamber and a pressure control ring disposed in the plasma chamber. The pressure control ring includes a body surrounding an electrostatic chuck in a plan view, an exhaust part disposed in a portion of the body along a first direction, the exhaust part configured to induce a flow of gas in the plasma chamber toward the first direction in a plan view, and a blocking part disposed in another portion of the body along a second direction perpendicular to the first direction in a plan view, the blocking part configured to block the flow of the gas in the second direction.