公开(公告)号：US20220226868A1

公开(公告)日：2022-07-21

申请号：US17502463

申请日：2021-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Seok ROH ,  Suji GIM ,  Heesub KIM ,  Hee Ock PARK ,  Jongyong BAE ,  Sung Chul YOON ,  Sunsoo LEE ,  Dong Keun JEON ,  Jinkyoung JOO

IPC: B08B9/08 ,  B08B3/02 ,  B08B5/02

Abstract: A scrubber system may include a scrubber housing including a vertically extended cleaning space, an inflow chamber coupled to a bottom portion of the scrubber housing, and first and second inflow portions, each of which is configured to supply a gas into the inflow chamber. The inflow chamber may include a mixing space, and the mixing space may be connected to the cleaning space. The first inflow portion may include a first connection pipe coupled to the inflow chamber to provide a first connection path and the second inflow portion may include a second connection pipe coupled to the inflow chamber to provide a second connection path. The first and second connection paths may be extended toward the mixing space in opposite directions, respectively, and may be connected to opposite portions of the mixing space, respectively.

公开(公告)号：US20220205094A1

公开(公告)日：2022-06-30

申请号：US17510532

申请日：2021-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suji GIM ,  Sunwoo YOOK ,  Youngduk KO ,  Youngseok ROH ,  Seoyoung MAENG ,  Jongyong BAE ,  Jihnkoo LEE ,  Jungjoon PYEON ,  Jongha HWANG

IPC: C23C16/455 ,  B01J35/00 ,  B01D53/94 ,  B01J35/04

Abstract: An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.

公开(公告)号：US20240181380A1

公开(公告)日：2024-06-06

申请号：US18442528

申请日：2024-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Seok ROH ,  Suji GIM ,  Heesub KIM ,  Hee Ock PARK ,  Jongyong BAE ,  Sung Chul YOON ,  Sunsoo LEE ,  Dong Keun JEON ,  Jinkyoung JOO

IPC: B01D47/06 ,  B08B9/08 ,  H01J37/32

CPC classification number: B01D47/06 ,  H01J37/32844 ,  B08B9/0813

Abstract: A scrubber system may include a scrubber housing including a vertically extended cleaning space, an inflow chamber coupled to a bottom portion of the scrubber housing, and first and second inflow portions, each of which is configured to supply a gas into the inflow chamber. The inflow chamber may include a mixing space, and the mixing space may be connected to the cleaning space. The first inflow portion may include a first connection pipe coupled to the inflow chamber to provide a first connection path and the second inflow portion may include a second connection pipe coupled to the inflow chamber to provide a second connection path. The first and second connection paths may be extended toward the mixing space in opposite directions, respectively, and may be connected to opposite portions of the mixing space, respectively.

公开(公告)号：US20220203290A1

公开(公告)日：2022-06-30

申请号：US17372855

申请日：2021-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suji GIM ,  Sunwoo YOOK ,  Youngduk KO ,  Youngseok ROH ,  Seoyoung MAENG ,  Jongyong BAE ,  Jihnkoo LEE ,  Jungjoon PYEON ,  Jongha HWANG

IPC: B01D53/04

Abstract: An exhaust gas processing system including a process chamber in which an exhaust gas is produced; an exhaust gas measurer receiving the exhaust gas and measuring a concentration of the exhaust gas; a solid producing gas processor receiving the exhaust gas and removing a solid producing gas contained in the exhaust gas; a gas supply supplying dilution and cooling gases to the solid producing gas processor; a processed gas measurer receiving, as a processed gas, the exhaust gas free of the solid producing gas and measuring a temperature of the processed gas and ingredients of the processed gas; and a controller receiving results of measurement of the concentration of the exhaust gas from the exhaust gas measurer and results of measurement of the temperature of the processed gas and the ingredients of the processed gas from the exhaust gas measurer and controlling the gas supply based on the measurement results.

公开(公告)号：US20220195603A1

公开(公告)日：2022-06-23

申请号：US17386667

申请日：2021-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungjoon PYEON ,  Seoyoung MAENG ,  Iljun JEON ,  Suji GIM ,  Youngseok ROH ,  Jongyong BAE

IPC: C23C16/52 ,  C23C16/455 ,  B01J4/00

Abstract: A reaction gas supply system includes a reaction chamber configured to process a substrate using a reaction gas, a mass flow controller (MFC) configured to control an amount of the reaction gas supplied to the reaction chamber, a tank between the reaction chamber and the MFC, the tank having a cylindrical inner space configured to store the reaction gas, and an outlet portion configured to discharge the reaction gas from the tank, and a valve between the tank and the reaction chamber, the outlet portion of the tank having a gradually decreasing diameter toward the valve.