LIGHT ABSORPTION STRUCTURE AND LIGHT SENSING DEVICE HAVING THE SAME

    公开(公告)号:US20240258443A1

    公开(公告)日:2024-08-01

    申请号:US18630449

    申请日:2024-04-09

    CPC classification number: H01L31/02327 H01L31/102

    Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

    LIGHT ABSORPTION STRUCTURE AND LIGHT SENSING DEVICE HAVING THE SAME

    公开(公告)号:US20220384666A1

    公开(公告)日:2022-12-01

    申请号:US17671697

    申请日:2022-02-15

    Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

Patent Agency Ranking