公开(公告)号：US20220384666A1

公开(公告)日：2022-12-01

申请号：US17671697

申请日：2022-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insung JOE ,  Jonghwa SHIN ,  Joonkyo JUNG ,  Jong Uk KIM

IPC: H01L31/0232 ,  H01L31/102

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

公开(公告)号：US20240258443A1

公开(公告)日：2024-08-01

申请号：US18630449

申请日：2024-04-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Insung JOE ,  Jonghwa SHIN ,  Joonkyo JUNG ,  Jong Uk KIM

IPC: H01L31/0232 ,  H01L31/102

CPC classification number: H01L31/02327 ,  H01L31/102

Abstract: A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.

公开(公告)号：US20240153975A1

公开(公告)日：2024-05-09

申请号：US18495179

申请日：2023-10-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkwan KIM ,  Minsung HEO ,  Jongwoo HONG ,  Insung JOE

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: An image sensor includes a substrate including a plurality of photoelectric conversion devices, a color filter arranged on the substrate, a reflective absorption layer on the color filter and comprising at least one of tungsten, titanium, and aluminum, an anti-reflective layer arranged on the reflective absorption layer, and a plurality of micro lenses on the anti-reflective layer. The color filter may include a plurality of dielectric layers extending in a first direction that is parallel to a rear surface of the substrate, the plurality of dielectric layers having different thicknesses in a second direction that is perpendicular to the rear surface of the substrate and perpendicular to the first direction, such that the plurality of dielectric layers includes at least one dielectric layer having a thickness in the second direction that varies along the first direction.

公开(公告)号：US20220093657A1

公开(公告)日：2022-03-24

申请号：US17343062

申请日：2021-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunyoung JO ,  Minho JANG ,  Insung JOE ,  Minsung HEO ,  Jaesung HUR

IPC: H01L27/146

Abstract: An image sensor including a first pixel, a second pixel, a pixel isolation structure between the first pixel and the second pixel, a first rear anti-reflecting layer disposed on the first pixel, the second pixel, and the pixel isolation structure; a fence disposed on the first rear anti-reflecting layer, the fence being aligned with the pixel isolation structure; and a second rear anti-reflecting layer disposed on the first rear anti-reflecting layer and the fence, wherein an air gap is present between the first rear anti-reflecting layer and the fence, and wherein the air gap is surrounded by the second rear anti-reflecting layer.