公开(公告)号：US10736091B2

公开(公告)日：2020-08-04

申请号：US15998495

申请日：2018-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoon-dong Noh ,  Young-woo Kwak ,  Ju-ho Lee

IPC: H04W72/04 ,  H04L5/00 ,  H04B1/00 ,  H04W28/20

Abstract: Methods and apparatuses for adapting a bandwidth of a terminal in a wireless communication system are provided. The method includes transmitting, to a base station (BS), information about bandwidth adaptation capability of the terminal, receiving, from the BS, a bandwidth adaptation command for requesting adaptation to a bandwidth corresponding to the bandwidth adaptation capability of the terminal, and adapting the bandwidth of the terminal in at least one symbol location in a unit time period of a subframe, based on the received bandwidth adaptation command.

公开(公告)号：US11316626B2

公开(公告)日：2022-04-26

申请号：US16645321

申请日：2018-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-jin Park ,  Jeong-ho Yeo ,  Jin-young Oh ,  Ju-ho Lee

IPC: H04L1/18 ,  H04L5/00 ,  H04L5/10

Abstract: Provided are a method and apparatus for transmitting and receiving control information in a wireless communication system, wherein the method, performed by a terminal, of transmitting and receiving control information according to an embodiment includes: receiving first type data; receiving second type data assigned to at least a part of a resource region assigned to the first type data; receiving an interruption indicator; and performing a hybrid automatic repeat request (HARQ) acknowledgement (ACK)/negative ACK (NACK) transmission regarding the first type data based on the interruption indicator.

公开(公告)号：US10468206B2

公开(公告)日：2019-11-05

申请号：US15095609

申请日：2016-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-soo Park ,  Keum-hwan Park ,  Ju-ho Lee ,  Jin-man Park

IPC: H01H1/021 ,  H01H11/04 ,  H01H13/785

Abstract: A method for patterning an amorphous alloy is provided. The method includes forming a pattern for defining an amorphous alloy deposition region on a parent material, forming an amorphous alloy deposition layer on the parent material with the pattern formed thereon, and etching a region except for the amorphous alloy deposition region. A dome switch is provided. The dome switch includes a metal layer shaped like a dome, a central portion of which protrudes, and, in response to external force being received through the protruding central portion, the central portion contacting and electrically connected to a circuit board, and an amorphous alloy layer disposed on the metal layer. Accordingly, an amorphous alloy structure with enhanced durability and reliability is easily manufactured.

公开(公告)号：US20190059078A1

公开(公告)日：2019-02-21

申请号：US15998495

申请日：2018-08-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoon-dong Noh ,  Young-woo Kwak ,  Ju-ho Lee

IPC: H04W72/04

Abstract: Methods and apparatuses for adapting a bandwidth of a terminal in a wireless communication system are provided. The method includes transmitting, to a base station (BS), information about bandwidth adaptation capability of the terminal, receiving, from the BS, a bandwidth adaptation command for requesting adaptation to a bandwidth corresponding to the bandwidth adaptation capability of the terminal, and adapting the bandwidth of the terminal in at least one symbol location in a unit time period of a subframe, based on the received bandwidth adaptation command.

公开(公告)号：US10195661B2

公开(公告)日：2019-02-05

申请号：US15095713

申请日：2016-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-man Park ,  Keum-hwan Park ,  Eun-soo Park ,  Ju-ho Lee

IPC: H05K9/00 ,  H01J37/34 ,  B22D23/00 ,  C23C14/34 ,  C22C45/08 ,  C22C45/02 ,  C23C14/14 ,  C22C45/04 ,  C23C30/00 ,  C22C45/10 ,  C22C45/00 ,  C23C14/20 ,  B29C43/18 ,  B29K79/00 ,  B29K705/00

Abstract: An electromagnetic wave shielding thin film for shielding from electromagnetic waves generated in an electronic part is provided. The electromagnetic wave shielding thin film includes metal plate which has elastic limit of 1% or more, strength of 1000 MPa or more, and a volume fraction of an amorphous phase of 50% or more.