公开(公告)号：US20210174860A1

公开(公告)日：2021-06-10

申请号：US16916280

申请日：2020-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghak SONG ,  Chanho LEE ,  Juchang LEE ,  Taemin CHOI

IPC: G11C11/408 ,  G11C11/4094 ,  G11C29/44

Abstract: A memory device having fault detection functionality for improving functional safety and a control system including the memory device are provided. The memory device includes a first memory cell array configured to store input data and output the input data as output data and a second memory cell array configured to store bit values of a row address and a column address of the first memory cell array in which the input data is stored, and output the bit values of the row address and the column address as an internal row address and an internal column address. The row/column address designating a read operation may be compared to the internal row/column address, and an address comparison signal as a result of the comparison may be output. The address comparison signal may provide fault detection functionality for a data error of an automotive electronic system.