公开(公告)号：US20230036420A1

公开(公告)日：2023-02-02

申请号：US17697019

申请日：2022-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongchul JEONG ,  Sangjin KIM ,  Yigwon KIM ,  Jinhee JANG ,  Taemin CHOI

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  G03F7/20

Abstract: A method of forming a pattern includes forming an etching object layer on a substrate. A photoresist layer including a metal, oxygen and an organic material is formed on the etching object layer. An exposure process is performed on the photoresist layer. A developing process is performed on the photoresist layer to form a photoresist pattern including a metal oxide. Ozone is provided onto the substrate to remove a residue of the photoresist layer that includes the organic material, The etching object layer is etched using the photoresist pattern as an etching mask.

公开(公告)号：US20210174860A1

公开(公告)日：2021-06-10

申请号：US16916280

申请日：2020-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghak SONG ,  Chanho LEE ,  Juchang LEE ,  Taemin CHOI

IPC: G11C11/408 ,  G11C11/4094 ,  G11C29/44

Abstract: A memory device having fault detection functionality for improving functional safety and a control system including the memory device are provided. The memory device includes a first memory cell array configured to store input data and output the input data as output data and a second memory cell array configured to store bit values of a row address and a column address of the first memory cell array in which the input data is stored, and output the bit values of the row address and the column address as an internal row address and an internal column address. The row/column address designating a read operation may be compared to the internal row/column address, and an address comparison signal as a result of the comparison may be output. The address comparison signal may provide fault detection functionality for a data error of an automotive electronic system.