公开(公告)号：US20220343966A1

公开(公告)日：2022-10-27

申请号：US17559110

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanho LEE ,  Jung-Hak SONG

IPC: G11C11/408 ,  G11C11/4094 ,  G11C11/4076 ,  G11C11/4074 ,  G11C11/4096

Abstract: A semiconductor memory device includes a memory cell array that includes memory cells arranged in rows and columns, a row decoder that is configured to receive a row address, decode the row address, and adjust voltages of selection lines based on the decoded row address, a word line driver that is connected with the selection lines, is connected with the rows of the memory cells through word lines, and is configured to adjust voltages of the word lines in response to an internal clock signal and the voltages of the selection lines, and a detection circuit that is connected with the word lines and is configured to activate a detection signal in response to voltages of the word lines being identical at a specific timing.

公开(公告)号：US20200273723A1

公开(公告)日：2020-08-27

申请号：US15930935

申请日：2020-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanho LEE ,  Hyunsoo CHUNG ,  Hansung RYU ,  InYoung LEE

IPC: H01L21/50 ,  H01L23/48 ,  H01L23/00 ,  H01L23/58 ,  H01L23/373 ,  H01L21/48 ,  H01L21/02 ,  H01L23/544 ,  H01L25/065 ,  H01L21/768

Abstract: A semiconductor device including a substrate, an insulating layer on the substrate and including a trench, at least one via structure penetrating the substrate and protruding above a bottom surface of the trench, and a conductive structure surrounding the at least one via structure in the trench may be provided.

公开(公告)号：US20180315620A1

公开(公告)日：2018-11-01

申请号：US15815032

申请日：2017-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanho LEE ,  Hyunsoo CHUNG ,  Hansung RYU ,  InYoung LEE

IPC: H01L21/50 ,  H01L23/48 ,  H01L23/00 ,  H01L21/02 ,  H01L23/373 ,  H01L21/48 ,  H01L23/58

CPC classification number: H01L21/50 ,  H01L21/02118 ,  H01L21/486 ,  H01L23/3128 ,  H01L23/373 ,  H01L23/481 ,  H01L23/544 ,  H01L23/58 ,  H01L24/02 ,  H01L25/0657 ,  H01L2223/54426

Abstract: A semiconductor device including a substrate, an insulating, layer on the substrate and including a trench, at least one via structure penetrating the substrate and protruding above a bottom surface of the trench, and a conductive structure surrounding the at least one via structure in the trench may be provided.

公开(公告)号：US20170162500A1

公开(公告)日：2017-06-08

申请号：US15259024

申请日：2016-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanho LEE ,  HYUNSOO CHUNG ,  Myeong Soon PARK

IPC: H01L23/522 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L23/5223 ,  H01L23/49816 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1403 ,  H01L2224/14104 ,  H01L2224/14166 ,  H01L2224/16238 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A semiconductor device comprising: a substrate; a decoupling capacitor disposed on the substrate; a first connection pad vertically overlapping with the decoupling capacitor; a passivation layer exposing a portion of the first connection pad; and a first solder bump disposed on the first connection pad and covering a portion of a top surface of the passivation layer.

公开(公告)号：US20210174860A1

公开(公告)日：2021-06-10

申请号：US16916280

申请日：2020-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghak SONG ,  Chanho LEE ,  Juchang LEE ,  Taemin CHOI

IPC: G11C11/408 ,  G11C11/4094 ,  G11C29/44

Abstract: A memory device having fault detection functionality for improving functional safety and a control system including the memory device are provided. The memory device includes a first memory cell array configured to store input data and output the input data as output data and a second memory cell array configured to store bit values of a row address and a column address of the first memory cell array in which the input data is stored, and output the bit values of the row address and the column address as an internal row address and an internal column address. The row/column address designating a read operation may be compared to the internal row/column address, and an address comparison signal as a result of the comparison may be output. The address comparison signal may provide fault detection functionality for a data error of an automotive electronic system.

公开(公告)号：US20190139785A1

公开(公告)日：2019-05-09

申请号：US16234815

申请日：2018-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanho LEE ,  Hyunsoo CHUNG ,  Hansung RYU ,  Inyoung LEE

IPC: H01L21/50 ,  H01L23/00 ,  H01L23/544 ,  H01L21/02 ,  H01L25/065 ,  H01L23/48 ,  H01L23/373 ,  H01L23/58 ,  H01L21/48 ,  H01L23/31

Abstract: A semiconductor device including a substrate, an insulating layer on the substrate and including a trench, at least one via structure penetrating the substrate and protruding above a bottom surface of the trench, and a conductive structure surrounding the at least one via structure in the trench may be provided.

公开(公告)号：US20210183663A1

公开(公告)日：2021-06-17

申请号：US17188404

申请日：2021-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanho LEE ,  Hyunsoo CHUNG ,  Hansung RYU ,  InYoung LEE

IPC: H01L21/50 ,  H01L23/48 ,  H01L23/00 ,  H01L23/58 ,  H01L23/373 ,  H01L21/48 ,  H01L21/02 ,  H01L23/544 ,  H01L25/065 ,  H01L21/768

Abstract: A semiconductor device including a substrate, an insulating layer on the substrate and including a trench, at least one via structure penetrating the substrate and protruding above a bottom surface of the trench, and a conductive structure surrounding the at least one via structure in the trench may be provided.