公开(公告)号：US20210384100A1

公开(公告)日：2021-12-09

申请号：US17307181

申请日：2021-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Chang RYU ,  Chulwoo KIM ,  Juhyun LYU ,  Sanghyun LEE ,  Yun Seok CHOI

IPC: H01L23/367 ,  H01L25/065 ,  H01L23/00

Abstract: A semiconductor package includes a first substrate, a first chip structure and a second chip structure spaced apart from each other on the first substrate, a gap region being defined between the first and second chip structures, and a heat dissipation member covering the first chip structure, the second chip structure, and the first substrate, the heat dissipation member including a first trench in an inner top surface of the heat dissipation member, wherein the first trench vertically overlaps with the gap region and has a width greater than a width of the gap region, and wherein the first trench vertically overlaps with at least a portion of a top surface of the first chip structure or a portion of a top surface of the second chip structure.

公开(公告)号：US20210384101A1

公开(公告)日：2021-12-09

申请号：US17408988

申请日：2021-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-Jeong KIM ,  Juhyun LYU ,  Un-Byoung KANG ,  Jongho LEE

IPC: H01L23/373 ,  H01L23/31 ,  H01L23/367

Abstract: Disclosed is a semiconductor package comprising first and second semiconductor structures spaced apart on a first substrate, a heat sink covering the first and second semiconductor structure and the first substrate, and a thermal interface material layer between the heat sink and the first and second semiconductor structures. The first semiconductor structure includes a first sidewall adjacent to the second semiconductor structure and a second sidewall opposite the first sidewall. The thermal interface material layer includes a first segment between the first and second semiconductor structures and a second segment protruding beyond the second sidewall. A first distance from a top surface of the first substrate to a lowest point of a bottom surface of the first segment is less than a second distance from the top surface of the first substrate to a lowest point of a bottom surface of the second segment.

公开(公告)号：US20200020606A1

公开(公告)日：2020-01-16

申请号：US16223642

申请日：2018-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-Jeong Kim ,  Juhyun LYU ,  Un-Byoung KANG ,  Jongho LEE

IPC: H01L23/373 ,  H01L23/367 ,  H01L23/31

Abstract: Disclosed is a semiconductor package comprising first and second semiconductor structures spaced apart on a first substrate, a heat sink covering the first and second semiconductor structure and the first substrate, and a thermal interface material layer between the heat sink and the first and second semiconductor structures. The first semiconductor structure includes a first sidewall adjacent to the second semiconductor structure and a second sidewall opposite the first sidewall. The thermal interface material layer includes a first segment between the first and second semiconductor structures and a second segment protruding beyond the second sidewall. A first distance from a top surface of the first substrate to a lowest point of a bottom surface of the first segment is less than a second distance from the top surface of the first substrate to a lowest point of a bottom surface of the second segment.