公开(公告)号：US20240284802A1

公开(公告)日：2024-08-22

申请号：US18242084

申请日：2023-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee Ju SHIN ,  Se Chung OH ,  Jun Ho JEONG

IPC: H10N50/20 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/20 ,  H10B61/22 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetic memory device and a method for fabricating the same are provided. The magnetic memory device includes a pinned layer pattern, a free layer pattern including boron (B), a tunnel barrier layer pattern between the pinned layer pattern and the free layer pattern, an oxide layer pattern spaced apart from the tunnel barrier layer pattern with the free layer pattern therebetween, the oxide layer pattern including a metal borate, and a capping layer pattern spaced apart from the free layer pattern with the oxide layer pattern therebetween, the capping layer pattern including a metal boride, wherein a difference between a boron concentration of the free layer pattern and a boron concentration of the oxide layer pattern is 10 at % or less, and a difference between the boron concentration of the oxide layer pattern and a boron concentration of the capping layer pattern is 10 at % or less.