公开(公告)号：US20250089261A1

公开(公告)日：2025-03-13

申请号：US18739636

申请日：2024-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sea Hoon LEE ,  Jun Hee LIM ,  Jun Seok OH ,  Seong Pil CHANG

IPC: H10B43/40 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

Abstract: A transistor that may provide improved durability and reliability is disclosed. The transistor includes a substrate including an active region, an element isolation film in the substrate that defines the active region, a first impurity region on a lower surface of the element isolation film, a second impurity region in the substrate, a gate electrode on the substrate and extending in a first direction, a source/drain area on at least one side of the gate electrode, a first source/drain contact group on the source/drain area, and a second source/drain contact group on the source/drain area and spaced apart from the first source/drain contact group in the first direction, wherein the second impurity region is between the first source/drain contact group and the second source/drain contact group.