公开(公告)号：US20240321580A1

公开(公告)日：2024-09-26

申请号：US18526038

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Jin PARK ,  Sung-Yong MOON ,  Jun Young JANG

IPC: H01L21/027 ,  G03F1/70 ,  G03F1/82 ,  H01L21/8234

CPC classification number: H01L21/0274 ,  G03F1/70 ,  G03F1/82 ,  H01L21/823431

Abstract: A photomask manufacturing method includes defining a main region and a dummy region based on a layout data, wherein the main region corresponds to an outer boundary surrounding functional patterns defined by the layout data and the dummy region corresponds to an empty space outside the main region, and forming a dummy pattern to fill the dummy region. The forming of the dummy pattern includes placing at least one first pattern block in the dummy region to form a first sub-region, each of the at least one first pattern block having a first area, and placing, after completing the placing of the at least one first pattern block in the dummy region, at least one second pattern block in the dummy region except the first sub-region to form a second sub-region, each of the at least one second pattern block having a second area smaller than the first area.