公开(公告)号：US20140017863A1

公开(公告)日：2014-01-16

申请号：US13918475

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon-Seok Lee ,  Yoon-Hae Kim ,  Hong-Seong Kang ,  Sung-Ho Son ,  JunJie Xiong ,  You-Shin Choi

IPC: H01L29/66

CPC classification number: H01L29/66477 ,  H01L21/28518 ,  H01L21/76814 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5228 ,  H01L27/0629 ,  H01L27/1052 ,  H01L28/20 ,  H01L29/41783 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of manufacturing a semiconductor device including metal gates are provided. The method may include forming a resistor pattern and a dummy gate electrode, which include polysilicon, and forming an impurity region adjacent to the dummy gate electrode. The method may further include replacing the dummy gate electrode with a gate electrode and then forming metal silicide patterns on the resistor pattern and the impurity region.

Abstract translation: 提供了制造包括金属栅极的半导体器件的方法。 该方法可以包括形成包括多晶硅的电阻器图案和虚拟栅极电极，并且形成与虚拟栅电极相邻的杂质区域。 该方法可以进一步包括用栅电极代替伪栅极电极，然后在电阻器图案和杂质区域上形成金属硅化物图案。