公开(公告)号：US20160300763A1

公开(公告)日：2016-10-13

申请号：US15189697

申请日：2016-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Kim ,  Hoon Jeong ,  Jae-Hyun Kim ,  Dong-Won Lee ,  Jung-Gu Han ,  Ji-Hye Hwang

IPC: H01L21/768 ,  H01L23/528 ,  G11C5/06 ,  H01L27/105

CPC classification number: H01L21/76897 ,  G11C5/063 ,  H01L21/768 ,  H01L21/76895 ,  H01L23/528 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10885

Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.

公开(公告)号：US09418998B2

公开(公告)日：2016-08-16

申请号：US14497649

申请日：2014-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Kim ,  Hoon Jeong ,  Jae-Hyun Kim ,  Dong-Won Lee ,  Jung-Gu Han ,  Ji-Hye Hwang

IPC: H01L23/528 ,  H01L27/105 ,  H01L21/768 ,  H01L27/108

CPC classification number: H01L21/76897 ,  G11C5/063 ,  H01L21/768 ,  H01L21/76895 ,  H01L23/528 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10885

Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.

Abstract translation: 提供半导体器件。 半导体器件包括位线结构和接触插头。 接触塞与位线结构的侧壁相邻，并且位于位线结构的倾斜表面上。 此外，在一些实施例中，当倾斜表面接近位线结构的侧壁时，位线结构的倾斜表面的水平变低。

公开(公告)号：US09786558B2

公开(公告)日：2017-10-10

申请号：US15189697

申请日：2016-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Kim ,  Hoon Jeong ,  Jae-Hyun Kim ,  Dong-Won Lee ,  Jung-Gu Han ,  Ji-Hye Hwang

IPC: H01L23/528 ,  H01L27/105 ,  H01L21/768 ,  G11C5/06 ,  H01L27/108

CPC classification number: H01L21/76897 ,  G11C5/063 ,  H01L21/768 ,  H01L21/76895 ,  H01L23/528 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10885

Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.

公开(公告)号：US20150228574A1

公开(公告)日：2015-08-13

申请号：US14497649

申请日：2014-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Kim ,  Hoon Jeong ,  Jae-Hyun Kim ,  Dong-Won Lee ,  Jung-Gu Han ,  Ji-Hye Hwang

IPC: H01L23/528 ,  H01L27/105

CPC classification number: H01L21/76897 ,  G11C5/063 ,  H01L21/768 ,  H01L21/76895 ,  H01L23/528 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10885

Abstract: Semiconductor devices are provided. A semiconductor device includes a bit line structure and a contact plug. The contact plug is adjacent a sidewall of the bit line structure and is on a sloped surface of the bit line structure. Moreover, in some embodiments, a level of the sloped surface of the bit line structure becomes lower as the sloped surface approaches the sidewall of the bit line structure.

Abstract translation: 提供半导体器件。 半导体器件包括位线结构和接触插塞。 接触塞与位线结构的侧壁相邻，并且位于位线结构的倾斜表面上。 此外，在一些实施例中，当倾斜表面接近位线结构的侧壁时，位线结构的倾斜表面的水平变低。