公开(公告)号：US11233374B2

公开(公告)日：2022-01-25

申请号：US16152661

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Ho Cha ,  Seong-Gu Kim ,  Dong-Jae Shin ,  Yong-Hwack Shin ,  Kyoung-Ho Ha

IPC: H01S5/02 ,  H01S5/10 ,  H01S5/20 ,  H01S5/024 ,  H01S5/026 ,  H01S5/323 ,  H01S5/042 ,  H01S5/40 ,  H01S5/32 ,  H01S5/343 ,  H01S5/34 ,  H01S5/125 ,  H01S5/227

Abstract: A semiconductor laser device includes a first cladding including gallium nitride (GaN) on a substrate, a light waveguide on the first cladding, a first contact pattern, a first SCH pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked on the light waveguide, and first and second electrodes on the first and second contact patterns, respectively.

公开(公告)号：US09897753B2

公开(公告)日：2018-02-20

申请号：US15388951

申请日：2016-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Kwon Bok ,  Kyoung-Ho Ha ,  Dong-Jae Shin ,  Seong-Gu Kim ,  Kwan-Sik Cho ,  Beom-Suk Lee ,  Jung-Ho Cha ,  Hyun-Il Byun ,  Dong-Hyun Kim ,  Yong-Hwack Shin ,  Jung-Hye Kim

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/125 ,  G02B6/136

CPC classification number: G02B6/1228 ,  G02B6/125 ,  G02B6/136 ,  G02B2006/12097

Abstract: An optical device includes a substrate; a trench in a portion of the substrate; a clad layer arranged in the trench; a first structure arranged on the clad layer to have a first depth; and a second structure arranged on the clad layer to have a second depth different from the first depth.