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公开(公告)号:US20210202276A1
公开(公告)日:2021-07-01
申请号:US17198938
申请日:2021-03-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seung-Yoon SONG , Chan-Hoon PARK , Jong-Woo SUN , Jung-Mo SUNG , Je-Woo HAN , Jin-Young PARK
Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.