公开(公告)号：US20210202276A1

公开(公告)日：2021-07-01

申请号：US17198938

申请日：2021-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung-Yoon SONG ,  Chan-Hoon PARK ,  Jong-Woo SUN ,  Jung-Mo SUNG ,  Je-Woo HAN ,  Jin-Young PARK

IPC: H01L21/67 ,  H01J37/32

Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.