公开(公告)号：US20230178487A1

公开(公告)日：2023-06-08

申请号：US17893770

申请日：2022-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungha HWANG ,  Dongchan LIM ,  Seulgi BAE

IPC: H01L23/532

CPC classification number: H01L23/53204 ,  H01L23/5329

Abstract: A semiconductor device including an insulating structure, and a conductive structure in the insulating structure may be provided. The conductive structure includes a barrier layer, an anti-migration layer on the barrier layer, a liner on the anti-migration layer, a conductive layer on the liner, and a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer. The capping layer and the liner include Co. The anti-migration layer includes Mn.