公开(公告)号：US20240194604A1

公开(公告)日：2024-06-13

申请号：US18357403

申请日：2023-07-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunyoung LEE ,  Wonwoong CHUNG ,  Buseo CHOI ,  Kkotchorong PARK ,  Seulgi BAE ,  Uisuk JUNG ,  Dong-Chan LIM

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/53223 ,  H01L21/76864 ,  H01L23/528 ,  H01L23/53238 ,  H01L23/53266

Abstract: The described technology relates generally to a material for a metal line in a semiconductor device including an alloy including aluminum as a main material, copper, and an element X, wherein the element X has 1) a coefficient of thermal expansion (CTE) of greater than about 0.55 ppm/K and less than about 5 ppm/K, 2) a melting point (MP) of greater than about 3000° C., and 3) electronegativity of greater than about 2.2, a metal line in a semiconductor device including the alloy, and a method of forming a metal line in a semiconductor device.

公开(公告)号：US20230178487A1

公开(公告)日：2023-06-08

申请号：US17893770

申请日：2022-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungha HWANG ,  Dongchan LIM ,  Seulgi BAE

IPC: H01L23/532

CPC classification number: H01L23/53204 ,  H01L23/5329

Abstract: A semiconductor device including an insulating structure, and a conductive structure in the insulating structure may be provided. The conductive structure includes a barrier layer, an anti-migration layer on the barrier layer, a liner on the anti-migration layer, a conductive layer on the liner, and a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer. The capping layer and the liner include Co. The anti-migration layer includes Mn.