公开(公告)号：US09831139B2

公开(公告)日：2017-11-28

申请号：US14997823

申请日：2016-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shaofeng Ding ,  Junjung Kim ,  Jeong HOON Ahn

IPC: H01L21/66 ,  G01R31/28 ,  G01R31/26 ,  H01L23/544 ,  H01L21/78

CPC classification number: H01L22/32 ,  G01R31/2644 ,  G01R31/2884 ,  H01L21/78 ,  H01L22/34 ,  H01L23/544 ,  H01L2223/5446

Abstract: A test structure for manufacturing a semiconductor device includes a test element, a first pad connected to the test element, and a second pad connected to the test element. A first wire is connected to the test element, and the first wire and the test element are part of a first layer disposed on a semiconductor substrate. A second wire is connected to the first wire, and is part of a second layer disposed on the semiconductor substrate, and the second layer is different from the first layer.