公开(公告)号：US20180358346A1

公开(公告)日：2018-12-13

申请号：US15838840

申请日：2017-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyo Jin Kim ,  KWAN YOUNG CHUN

IPC: H01L27/02 ,  H01L29/66 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L27/0207 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/0886 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/6681

Abstract: A semiconductor device includes a cell region that includes a first active region and a second active region extending in a first direction and a separation region between the first active region and the second active region. The cell region has a first width. A first gate structure and a second gate structure are disposed on the cell region, are spaced apart from each other in the first direction, and extend in the second direction. A first metal line and a second metal line are disposed on the cell region, extend in the first direction, and are spaced apart from each other by a first pitch. Each of the first and second metal lines has a second width. A first gate contact electrically connects the first gate structure and the first metal line. At least a portion of the first gate contact overlaps the separation region. A second gate contact electrically connects the second gate structure and the second metal line. At least a portion of the second gate contact overlaps the separation region. The first width divided by a sum of the first pitch and the second width is six or less.