公开(公告)号：US20220231117A1

公开(公告)日：2022-07-21

申请号：US17714259

申请日：2022-04-06

申请人： Samsung Electronics Co., Ltd.

发明人： Han Jin LIM ,  Ki Nam KIM ,  Hyung Suk JUNG ,  Kyoo Ho JUNG ,  Ki Hyun HWANG

IPC分类号： H01L49/02 ,  H01L21/02 ,  H01L21/28 ,  H01L27/11507

摘要： There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.

公开(公告)号：US20230361161A1

公开(公告)日：2023-11-09

申请号：US18347850

申请日：2023-07-06

申请人： Samsung Electronics Co., Ltd.

发明人： Han Jin LIM ,  Ki Nam KIM ,  Hyung Suk JUNG ,  Kyoo Ho JUNG ,  Ki Hyun HWANG

IPC分类号： H01L21/28 ,  H01L21/02

CPC分类号： H01L28/56 ,  H01L21/02197 ,  H01L21/02192 ,  H01L21/02189 ,  H01L21/02181 ,  H01L21/28247 ,  H10B53/30 ,  H10B12/00

摘要： There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.