公开(公告)号：US20150221699A1

公开(公告)日：2015-08-06

申请号：US14599064

申请日：2015-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-kyu LEE ,  Ki-Seok SUH

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L27/228 ,  G11C11/1659 ,  H01L43/02 ,  H01L43/08

Abstract: The magnetic memory device includes a plurality of source lines arranged in parallel in a second direction orthogonal to a first direction while extending in the first direction on a substrate, a plurality of word lines arranged in parallel in the first direction while extending in the second direction on the substrate, a plurality of bit lines arranged in parallel in the second direction while extending in the first direction on the substrate to alternate with the plurality of source lines, and a plurality of active regions arranged to extend at an oblique angle with respect to the first direction and arranged so that one memory cell is selected when one of the plurality of word lines and one of the plurality of source lines or the plurality of bit lines are selected.

Abstract translation: 磁存储器件包括沿与第一方向正交的第二方向平行布置的多条源极线，同时在衬底上沿第一方向延伸;多条字线，沿第一方向平行布置，同时沿第二方向延伸 在所述基板上，沿着所述第一方向在所述基板上沿所述第一方向延伸而与所述多个源极线交替的多个位线，所述多个位线在所述第二方向上平行布置，并且所述多个有源区域被布置成相对于 所述第一方向被布置成使得当所述多条字线中的一条字线和所述多条源极线或多条位线中的一条被选择时选择一个存储器单元。