公开(公告)号：US20030036239A1

公开(公告)日：2003-02-20

申请号：US10034043

申请日：2001-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-soon Lim ,  Seung-hwan Lee ,  Han-mei Choi ,  Yun-jung Lee ,  Gab-jin Nam ,  Ki-yeon Park ,  Young-sun Kim ,  Sung-tae Kim

IPC: H01L021/8234 ,  H01L021/8244 ,  H01L021/8242 ,  H01L021/20

CPC classification number: H01L28/55

Abstract: A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.

Abstract translation: 提供一种用于制造半导体器件的电容器的方法。 该方法包括以下步骤：在半导体衬底上形成第一电极; 在所述第一电极上形成介电层; 在所述电介质层上形成第二电极; 在氧气氛下首先退火具有第一电极，电介质层和第二电极的电容器; 以及在真空下对具有第一电极，电介质层和第二电极的电容器进行第二次退火。