公开(公告)号：US20030060042A1

公开(公告)日：2003-03-27

申请号：US10127651

申请日：2002-04-22

Applicant: Samsung Electronics Co. Ltd.

Inventor： Hee-sook Park ,  Gil-heyun Choi ,  Seung-hwan Lee ,  Yun-jung Lee

IPC: H01L021/8234 ,  H01L021/8244 ,  H01L021/44

CPC classification number: H01L21/76843 ,  H01L21/28562 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/10814 ,  H01L27/10882 ,  H01L27/10894 ,  H01L28/75 ,  H01L28/90

Abstract: A method for fabricating a semiconductor device is provided. A ruthenium layer is formed on a semiconductor substrate in a processing chamber. A barrier layer is formed on the ruthenium layer supplying a halide-free precursor in the processing chamber. A metal layer such as an aluminum layer, an aluminum alloy layer, a tungsten layer, or a copper layer is formed on the barrier layer. The barrier layer is one of a TiN layer, a TaN layer, a WN layer, and an MoN layer. The TiN layer is one of formed by using an MOCVD process and an ALD process, and the halide-free precursor is a titanium compound selected from the group consisting of pentakis(diethylamino) titanium, tetrakis(diethylamino) titanium, tetrakis(dimethylamino) titanium, and pentakis(dimethylamino) titanium. The TaN layer is formed by using one of an MOCVD process and an ALD process, and the halide-free precursor is a tantalum compound selected from the group consisting of t-butyltrikis(diethylamino) tantalum, pentakis(diethylamino) tantalum, tetrakis(dimethylamino) tantalum, and pentakis(dimethylamino) tantalum.

Abstract translation: 提供一种制造半导体器件的方法。 在处理室中的半导体衬底上形成钌层。 在处理室中提供无卤素前体的钌层上形成阻挡层。 在阻挡层上形成铝层，铝合金层，钨层，铜层等金属层。 阻挡层是TiN层，TaN层，WN层和MoN层之一。 TiN层是通过使用MOCVD法和ALD法形成的，并且不含卤化物的前体是选自五（二乙基氨基）钛，四（二乙基氨基）钛，四（二甲基氨基）钛，四 ，和五（二甲基氨基）钛。 通过使用MOCVD法和ALD法之一形成TaN层，无卤素前体是选自叔丁基（二乙氨基）钽，五（二乙基氨基）钽，四（二甲基氨基） ）钽和五（二甲基氨基）钽。

公开(公告)号：US20030036239A1

公开(公告)日：2003-02-20

申请号：US10034043

申请日：2001-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-soon Lim ,  Seung-hwan Lee ,  Han-mei Choi ,  Yun-jung Lee ,  Gab-jin Nam ,  Ki-yeon Park ,  Young-sun Kim ,  Sung-tae Kim

IPC: H01L021/8234 ,  H01L021/8244 ,  H01L021/8242 ,  H01L021/20

CPC classification number: H01L28/55

Abstract: A method for manufacturing a capacitor of a semiconductor device is provided. The method includes the steps of: forming a first electrode on a semiconductor substrate; forming a dielectric layer on the first electrode; forming a second electrode on the dielectric layer; first annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under oxygen atmosphere; and second annealing the capacitor having the first electrode, the dielectric layer, and the second electrode under vacuum.

Abstract translation: 提供一种用于制造半导体器件的电容器的方法。 该方法包括以下步骤：在半导体衬底上形成第一电极; 在所述第一电极上形成介电层; 在所述电介质层上形成第二电极; 在氧气氛下首先退火具有第一电极，电介质层和第二电极的电容器; 以及在真空下对具有第一电极，电介质层和第二电极的电容器进行第二次退火。