公开(公告)号：US20240290414A1

公开(公告)日：2024-08-29

申请号：US18515681

申请日：2023-11-21

申请人： Samsung Electronics Co., Ltd.

发明人： Taewon Kim ,  Sanghee Kang ,  Kiho Hyun ,  Taeyun Kim

IPC分类号： G11C29/44 ,  G11C29/12 ,  G11C29/24

CPC分类号： G11C29/44 ,  G11C29/12015 ,  G11C29/24

摘要： A method of testing a repair circuit of a memory device. The method may include storing first addresses in a first register of the repair circuit, wherein the first register is configured to store faulty addresses during a normal operation of the memory device, and the repair circuit is configured to perform a repair operation to replace the faulty addresses with redundancy addresses, storing test addresses in a second register of the repair circuit, wherein the test addresses are provided from a test host, outputting hit signals by comparing bit values of the addresses stored in the first register with bit values of the addresses stored in the second register, outputting repair enable signals based on the hit signals, and determining a status of a path where the repair enable signals are generated based on logic levels of the repair enable signals.