公开(公告)号：US20150036431A1

公开(公告)日：2015-02-05

申请号：US14328913

申请日：2014-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hai-Seok PARK ,  Boh-Chang KIM ,  Hyung Suk KIM ,  Kiwhan SONG

IPC: G11C16/26

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3427

Abstract: An operating method of a memory controller controlling a nonvolatile memory device including a plurality of pages includes receiving a read request and a logical address from an additional device; determining a program state of an upper unselected word line of a selected word line corresponding to the received logical address; and transmitting a physical address corresponding to the logical address, state information, and a read command to the nonvolatile memory device according to a result of the determination in response to the read request, wherein the state information indicates a level of a first unselect read voltage the nonvolatile memory device is to apply to the upper unselected word line.

Abstract translation: 控制包括多页的非易失性存储装置的存储器控​​制器的操作方法包括从附加装置接收读取请求和逻辑地址; 确定与所接收的逻辑地址相对应的所选字线的上未选字线的编程状态; 以及根据所述读取请求，根据所述确定的结果向所述非易失性存储器件发送对应于所述逻辑地址，状态信息和读取命令的物理地址，其中所述状态信息指示第一未选择读取电压的电平 非易失性存储器件应用于上部未选择的字线。