公开(公告)号：US20210118520A1

公开(公告)日：2021-04-22

申请号：US17135125

申请日：2020-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boh-Chang KIM

IPC: G11C29/50 ,  G11C29/42 ,  G11C11/56 ,  G11C16/12 ,  G11C29/02

Abstract: A program method of a nonvolatile memory device including a plurality of memory cells, each storing at least two bits of data, includes performing a first program operation based on a plurality of program voltages having a first pulse width to program first page data into selected memory cells connected to a selected word line among the plurality of memory cells; and performing a second program operation based on a plurality of program voltages having a second pulse width different from the first pulse width to program second page data into the selected memory cells in which the first page data is programmed.

公开(公告)号：US20220223223A1

公开(公告)日：2022-07-14

申请号：US17707473

申请日：2022-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boh-Chang KIM

IPC: G11C29/50 ,  G11C29/42 ,  G11C11/56 ,  G11C16/12 ,  G11C29/02

Abstract: A program method of a nonvolatile memory device including a plurality of memory cells, each storing at least two bits of data, includes performing a first program operation based on a plurality of program voltages having a first pulse width to program first page data into selected memory cells connected to a selected word line among the plurality of memory cells; and performing a second program operation based on a plurality of program voltages having a second pulse width different from the first pulse width to program second page data into the selected memory cells in which the first page data is programmed.

公开(公告)号：US20180301203A1

公开(公告)日：2018-10-18

申请号：US16015929

申请日：2018-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boh-Chang KIM

IPC: G11C29/50 ,  G11C16/12 ,  G11C29/02 ,  G11C29/42 ,  G11C11/56

Abstract: A program method of a nonvolatile memory device including a plurality of memory cells, each storing at least two bits of data, includes performing a first program operation based on a plurality of program voltages having a first pulse width to program first page data into selected memory cells connected to a selected word line among the plurality of memory cells; and performing a second program operation based on a plurality of program voltages having a second pulse width different from the first pulse width to program second page data into the selected memory cells in which the first page data is programmed.

公开(公告)号：US20150036431A1

公开(公告)日：2015-02-05

申请号：US14328913

申请日：2014-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hai-Seok PARK ,  Boh-Chang KIM ,  Hyung Suk KIM ,  Kiwhan SONG

IPC: G11C16/26

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/3427

Abstract: An operating method of a memory controller controlling a nonvolatile memory device including a plurality of pages includes receiving a read request and a logical address from an additional device; determining a program state of an upper unselected word line of a selected word line corresponding to the received logical address; and transmitting a physical address corresponding to the logical address, state information, and a read command to the nonvolatile memory device according to a result of the determination in response to the read request, wherein the state information indicates a level of a first unselect read voltage the nonvolatile memory device is to apply to the upper unselected word line.

Abstract translation: 控制包括多页的非易失性存储装置的存储器控​​制器的操作方法包括从附加装置接收读取请求和逻辑地址; 确定与所接收的逻辑地址相对应的所选字线的上未选字线的编程状态; 以及根据所述读取请求，根据所述确定的结果向所述非易失性存储器件发送对应于所述逻辑地址，状态信息和读取命令的物理地址，其中所述状态信息指示第一未选择读取电压的电平 非易失性存储器件应用于上部未选择的字线。

公开(公告)号：US20230245710A1

公开(公告)日：2023-08-03

申请号：US18192272

申请日：2023-03-29

Applicant: Samsung Electronics Co, Ltd.

Inventor： Boh-Chang KIM

IPC: G11C29/50 ,  G11C29/42 ,  G11C11/56 ,  G11C16/12 ,  G11C29/02

CPC classification number: G11C29/50004 ,  G11C11/5628 ,  G11C16/12 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C29/42 ,  G11C16/10 ,  G11C2029/5004

Abstract: A program method of a nonvolatile memory device including a plurality of memory cells, each storing at least two bits of data, includes performing a first program operation based on a plurality of program voltages having a first pulse width to program first page data into selected memory cells connected to a selected word line among the plurality of memory cells; and performing a second program operation based on a plurality of program voltages having a second pulse width different from the first pulse width to program second page data into the selected memory cells in which the first page data is programmed.

公开(公告)号：US20160203049A1

公开(公告)日：2016-07-14

申请号：US14956659

申请日：2015-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boh-Chang KIM

IPC: G06F11/10 ,  G11C29/50 ,  G11C29/42

CPC classification number: G11C29/50004 ,  G06F3/0679 ,  G06F3/0688 ,  G06F11/1072 ,  G11C11/2275 ,  G11C11/5628 ,  G11C13/0069 ,  G11C16/10 ,  G11C16/12 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C29/42 ,  G11C2029/5004

Abstract: A program method of a nonvolatile memory device including a plurality of memory cells, each storing at least two bits of data, includes performing a first program operation based on a plurality of program voltages having a first pulse width to program first page data into selected memory cells connected to a selected word line among the plurality of memory cells; and performing a second program operation based on a plurality of program voltages having a second pulse width different from the first pulse width to program second page data into the selected memory cells in which the first page data is programmed.

Abstract translation: 包括存储至少两位数据的多个存储器单元的非易失性存储器件的编程方法包括：基于具有第一脉冲宽度的多个编程电压来执行第一编程操作，以将第一页数据编程到选择的存储器 连接到所述多个存储器单元中的选定字线的单元; 以及基于具有与所述第一脉冲宽度不同的第二脉冲宽度的多个编程电压来执行第二编程操作，以将第二页数据编程到所述第一页数据被编程的所选存储单元中。