公开(公告)号：US09893187B2

公开(公告)日：2018-02-13

申请号：US15342008

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jorge A. Kittl ,  Chris Bowen ,  Kiyotaka Imai ,  Mark S. Rodder

IPC: H01L21/00 ,  H01L29/78 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7848 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/7869

Abstract: A method for fabricating a fin field effect transistor (finFET) device with a strained channel. During fabrication, after the fin is formed, a dummy gate is deposited on the fin, and processed, e.g., by plasma doping and annealing, to cause stress in the dummy gate. Deep source drain (SD) recesses are formed, resulting in strain in the channel, and SD structures are formed to anchor the ends of the fin. The dummy gate is then removed.

公开(公告)号：US20170345932A1

公开(公告)日：2017-11-30

申请号：US15342008

申请日：2016-11-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jorge A. Kittl ,  Chris Bowen ,  Kiyotaka Imai ,  Mark S. Rodder

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/7848 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/7869

Abstract: A method for fabricating a fin field effect transistor (finFET) device with a strained channel. During fabrication, after the fin is formed, a dummy gate is deposited on the fin, and processed, e.g., by plasma doping and annealing, to cause stress in the dummy gate. Deep source drain (SD) recesses are formed, resulting in strain in the channel, and SD structures are formed to anchor the ends of the fin. The dummy gate is then removed.