公开(公告)号：US20190013260A1

公开(公告)日：2019-01-10

申请号：US16131182

申请日：2018-09-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-il CHOI ,  Kun-sang PARK ,  Son-kwan HWANG ,  Ji-soon PARK ,  Byung-lyul PARK

IPC: H01L23/48 ,  H01L21/768 ,  H01L23/31 ,  H01L25/065 ,  H01L23/532

Abstract: An integrated circuit (IC) device includes a semiconductor substrate having a via hole extending through at least a part thereof, a conductive structure in the via hole, a conductive barrier layer adjacent the conductive structure; and a via insulating layer interposed between the semiconductor substrate and the conductive barrier layer. The conductive barrier layer may include an outer portion oxidized between the conductive barrier layer and the via insulating layer, and the oxidized outer portion of the conductive barrier layer may substantially surrounds the remaining portion of the conductive barrier layer.