公开(公告)号：US11181831B2

公开(公告)日：2021-11-23

申请号：US16558860

申请日：2019-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung-hwan Lee ,  Young-ho Kwon ,  Souk Kim ,  Young-hoon Sohn ,  Yu-sin Yang

IPC: G03F7/20

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of overlay molds on a semiconductor structure by developing a photoresist material layer of the semiconductor structure, the semiconductor structure including a first layer having a plurality of overlay marks, the plurality of overlay molds at least partially overlapping at least some of the plurality of overlay marks; and measuring one or more overlays by radiating a light having a wavelength band onto the semiconductor structure, each of the one or more overlays indicating an amount of consistency of the first layer and a second layer of the semiconductor structure, the wavelength band being set based on the plurality of overlay marks and the plurality of overlay molds, the second layer being between the first layer and the photoresist material layer.