公开(公告)号：US20190393410A1

公开(公告)日：2019-12-26

申请号：US16184153

申请日：2018-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Kyu Lee ,  Young Hyun Kim ,  Jung Hwan Park ,  Jung Min Lee ,  Kyung II Hong

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  H01L27/22

Abstract: A semiconductor device includes a first electrode disposed on a substrate, a magnetic tunnel junction (MTJ) on the first electrode, a capping layer on the MTJ, a stress-inducing layer on the capping layer, and a second electrode on the stress-inducing layer. The stress-inducing layer may have tensile stress.