公开(公告)号：US09053979B2

公开(公告)日：2015-06-09

申请号：US13779355

申请日：2013-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Baek Seon ,  Myung-kwan Ryu ,  Kyung-Bae Park ,  Sang-yoon Lee ,  Bon-Won Koo

IPC: H01L29/10 ,  H01L29/12 ,  H01L31/18

CPC classification number: H01L29/12 ,  H01L31/1884 ,  Y02E10/50 ,  Y10T428/24975

Abstract: Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing the oxide thin film, the methods including (A) applying an oxide precursor solution comprising at least one of zinc (Zn), indium (In) and tin (Sn) on a substrate, (B) heat-treating the oxide precursor solution to form an oxide layer, and (C) repeating the steps (A) and (B) to form a plurality of the oxide layers.

Abstract translation: 氧化物薄膜，包括氧化物薄膜的电子器件和制造氧化物薄膜的方法，包括（A）应用包含锌（Zn），铟（In）和锡（Sn）中的至少一种的氧化物前体溶液的方法， （B）对氧化物前体溶液进行热处理以形成氧化物层，（C）重复步骤（A）和（B）以形成多个氧化物层。

公开(公告)号：US08658546B2

公开(公告)日：2014-02-25

申请号：US13650819

申请日：2012-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Baek Seon ,  Hyun-Jae Kim ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Hyun-Soo Shin ,  Kyung-Bae Park ,  Woong-Hee Jeong ,  Gun-hee Kim ,  Byung-Du Ahn

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L29/7869

Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Abstract translation: 用于形成氧化物薄膜的溶液组合物可以包括包含锌的第一化合物，包括铟的第二化合物和包含镁或铪的第三化合物，并且电子器件可以包括包含锌，铟和镁的氧化物半导体。 锌和铪可以以约1:0.01至约1:1的原子比包括在内。