公开(公告)号：US10290527B2

公开(公告)日：2019-05-14

申请号：US15924978

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-soo Lee ,  Jae-hoon Kim ,  Kyung-hak Min

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/687

Abstract: The inventive concept provides a method of manufacturing a semiconductor device using a plasma etching apparatus including an alignment chamber and a process chamber. The method includes: loading a wafer in the alignment chamber of the plasma etching apparatus; rotating the wafer loaded in the alignment chamber according to a plurality of heating zones arranged in an electrostatic chuck of the process chamber, thereby rotating a reference point of the wafer; transferring the wafer that was rotated in the alignment chamber onto the electrostatic chuck of the process chamber; and plasma-etching the wafer that was rotated in the alignment chamber on the electrostatic chuck of the process chamber.

公开(公告)号：US20190080948A1

公开(公告)日：2019-03-14

申请号：US15924978

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-soo Lee ,  Jae-hoon Kim ,  Kyung-hak Min

IPC: H01L21/68 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065 ,  H01J37/32

Abstract: The inventive concept provides a method of manufacturing a semiconductor device using a plasma etching apparatus including an alignment chamber and a process chamber. The method includes: loading a wafer in the alignment chamber of the plasma etching apparatus; rotating the wafer loaded in the alignment chamber according to a plurality of heating zones arranged in an electrostatic chuck of the process chamber, thereby rotating a reference point of the wafer; transferring the wafer that was rotated in the alignment chamber onto the electrostatic chuck of the process chamber; and plasma-etching the wafer that was rotated in the alignment chamber on the electrostatic chuck of the process chamber.